| PART |
Description |
Maker |
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| ZXTD3M832TC ZXTD3M832 ZXTD3M832TA |
Dual PNP Low Sat Transistor
MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
ON Semiconductor
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
| FMMTA92 FMMTA93 FMMTA92TA FMMTA92R |
200 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PNP High Voltage Transistor
|
ZETEX PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| BC80725MTFNL BC80816MTF FAIRCHILDSEMICONDUCTORCORP |
PNP Epitaxial Silicon Transistor 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
